4GFX
Crystal structure of the N-terminal domain of TXNIP
Experimental procedure
Experimental method | SINGLE WAVELENGTH |
Source type | SYNCHROTRON |
Source details | PAL/PLS BEAMLINE 4A |
Synchrotron site | PAL/PLS |
Beamline | 4A |
Temperature [K] | 173 |
Detector technology | CCD |
Collection date | 2007-07-10 |
Detector | ADSC QUANTUM 210 |
Wavelength(s) | 1.0000 |
Spacegroup name | P 21 21 21 |
Unit cell lengths | 37.431, 56.621, 67.660 |
Unit cell angles | 90.00, 90.00, 90.00 |
Refinement procedure
Resolution | 18.780 - 1.600 |
R-factor | 0.17423 |
Rwork | 0.171 |
R-free | 0.22711 |
Structure solution method | MOLECULAR REPLACEMENT |
Starting model (for MR) | PARTIALLY REFINED STRUCTURE OF MSE-LABELED TXNIP N-TERMINAL DOMAIN |
RMSD bond length | 0.008 |
RMSD bond angle | 1.129 |
Data reduction software | HKL-2000 |
Data scaling software | HKL-2000 |
Phasing software | MOLREP |
Refinement software | REFMAC (5.2.0019) |
Data quality characteristics
Overall | Outer shell | |
Low resolution limit [Å] | 50.000 | 1.660 |
High resolution limit [Å] | 1.600 | 1.600 |
Number of reflections | 18976 | |
Completeness [%] | 97.0 | 90.5 |
Crystallization Conditions
crystal ID | method | pH | temperature | details |
1 | VAPOR DIFFUSION, SITTING DROP | 7.5 | 294 | 0.75 M sodium/potassium phosphate, 0.1 M HEPES sodium, pH 7.5, VAPOR DIFFUSION, SITTING DROP, temperature 294K |