4GFX
Crystal structure of the N-terminal domain of TXNIP
Experimental procedure
| 実験手法 | SINGLE WAVELENGTH |
| Source type | SYNCHROTRON |
| Source details | PAL/PLS BEAMLINE 4A |
| Synchrotron site | PAL/PLS |
| Beamline | 4A |
| Temperature [K] | 173 |
| Detector technology | CCD |
| Collection date | 2007-07-10 |
| Detector | ADSC QUANTUM 210 |
| Wavelength(s) | 1.0000 |
| Spacegroup name | P 21 21 21 |
| 格子定数 [Å] | 37.431, 56.621, 67.660 |
| 格子定数 [度] | 90.00, 90.00, 90.00 |
精密化法
| 残基 | 18.780 - 1.600 |
| R因子 | 0.17423 |
| Rwork | 0.171 |
| R-free | 0.22711 |
| Structure solution method | MOLECULAR REPLACEMENT |
| Starting model (for MR) | PARTIALLY REFINED STRUCTURE OF MSE-LABELED TXNIP N-TERMINAL DOMAIN |
| 結合長の平均二乗偏差(RMSD) [Å] | 0.008 |
| 結合角の平均二乗偏差(RMSD) [度] | 1.129 |
| Data reduction software | HKL-2000 |
| Data scaling software | HKL-2000 |
| Phasing software | MOLREP |
| Refinement software | REFMAC (5.2.0019) |
Quality characteristics
| Overall | Outer shell | |
| 分解能 [Å] (低) | 50.000 | 1.660 |
| 分解能 [Å] (高) | 1.600 | 1.600 |
| 独立反射数 | 18976 | |
| 完全性 [%] | 97.0 | 90.5 |
結晶化条件
| 結晶ID | 方法 | pH | 温度 | 溶液条件 |
| 1 | VAPOR DIFFUSION, SITTING DROP | 7.5 | 294 | 0.75 M sodium/potassium phosphate, 0.1 M HEPES sodium, pH 7.5, VAPOR DIFFUSION, SITTING DROP, temperature 294K |
