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4G7Y

Crystal structure of voltage sensing domain of Ci-VSP with fragment antibody (R217E, 2.8 A)

Experimental procedure
Experimental methodSINGLE WAVELENGTH
Source typeSYNCHROTRON
Source detailsAPS BEAMLINE 23-ID-B
Synchrotron siteAPS
Beamline23-ID-B
Temperature [K]100
Detector technologyCCD
Collection date2011-02-27
DetectorMar 300 CCD
Spacegroup nameP 65 2 2
Unit cell lengths121.010, 121.010, 229.570
Unit cell angles90.00, 90.00, 120.00
Refinement procedure
Resolution104.800 - 2.800
R-factor0.20887
Rwork0.206
R-free0.26078
Structure solution methodMOLECULAR REPLACEMENT
RMSD bond length0.014
RMSD bond angle1.634
Data reduction softwareMOSFLM
Data scaling softwareSCALA
Phasing softwarePHASER
Refinement softwareREFMAC (5.6.0117)
Data quality characteristics
 Overall
Low resolution limit [Å]104.800
High resolution limit [Å]2.800
Number of reflections24429
Completeness [%]100.0
Redundancy8.2
Crystallization Conditions
crystal IDmethodpHtemperaturedetails
1VAPOR DIFFUSION, HANGING DROP92930.1 M Bicine, 0.3 M MgCl2, 24% PEG 2000, 10% Glycerol, pH 9.0, VAPOR DIFFUSION, HANGING DROP, temperature 293K
1VAPOR DIFFUSION, HANGING DROP92930.1 M Bicine, 0.3 M MgCl2, 24% PEG 2000, 10% Glycerol, pH 9.0, VAPOR DIFFUSION, HANGING DROP, temperature 293K

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