4G7V
Crystal structure of voltage sensing domain of Ci-VSP with fragment antibody (R217E, 2.5 A)
Experimental procedure
Experimental method | SINGLE WAVELENGTH |
Source type | SYNCHROTRON |
Source details | APS BEAMLINE 23-ID-B |
Synchrotron site | APS |
Beamline | 23-ID-B |
Temperature [K] | 100 |
Detector technology | CCD |
Detector | MAR 300 CCD |
Spacegroup name | P 65 2 2 |
Unit cell lengths | 120.250, 120.250, 229.880 |
Unit cell angles | 90.00, 90.00, 120.00 |
Refinement procedure
Resolution | 37.238 - 2.500 |
R-factor | 0.2028 |
Rwork | 0.201 |
R-free | 0.24040 |
Structure solution method | MOLECULAR REPLACEMENT |
RMSD bond length | 0.008 |
RMSD bond angle | 1.126 |
Data reduction software | HKL-2000 |
Data scaling software | HKL-2000 |
Phasing software | PHASER |
Refinement software | PHENIX ((phenix.refine: 1.7.3_928)) |
Data quality characteristics
Overall | |
Low resolution limit [Å] | 50.000 |
High resolution limit [Å] | 2.500 |
Number of reflections | 33756 |
Completeness [%] | 99.8 |
Redundancy | 5.1 |
Crystallization Conditions
crystal ID | method | pH | temperature | details |
1 | VAPOR DIFFUSION, HANGING DROP | 8 | 293 | 0.1 M SPG, 20% PEG 1500, 10% glycerol, pH 8.0, VAPOR DIFFUSION, HANGING DROP, temperature 293K |
1 | VAPOR DIFFUSION, HANGING DROP | 8 | 293 | 0.1 M SPG, 20% PEG 1500, 10% glycerol, pH 8.0, VAPOR DIFFUSION, HANGING DROP, temperature 293K |