8SFD
Crystal structure of the engineered SsoPox variant IVB10
Experimental procedure
Experimental method | SINGLE WAVELENGTH |
Source type | SYNCHROTRON |
Source details | APS BEAMLINE 23-ID-B |
Synchrotron site | APS |
Beamline | 23-ID-B |
Temperature [K] | 100 |
Detector technology | PIXEL |
Collection date | 2017-08-23 |
Detector | DECTRIS EIGER X 16M |
Wavelength(s) | 1.03321 |
Spacegroup name | C 2 2 21 |
Unit cell lengths | 65.260, 74.690, 138.710 |
Unit cell angles | 90.00, 90.00, 90.00 |
Refinement procedure
Resolution | 49.190 - 1.500 |
R-factor | 0.14022 |
Rwork | 0.138 |
R-free | 0.17272 |
Structure solution method | MOLECULAR REPLACEMENT |
RMSD bond length | 0.005 |
RMSD bond angle | 0.846 |
Data reduction software | XDS |
Data scaling software | XSCALE |
Phasing software | REFMAC |
Refinement software | REFMAC (5.8.0352) |
Data quality characteristics
Overall | Outer shell | |
Low resolution limit [Å] | 49.190 | 1.600 |
High resolution limit [Å] | 1.500 | 1.500 |
Rmeas | 0.055 | 0.599 |
Number of reflections | 54520 | 9490 |
<I/σ(I)> | 21.5 | |
Completeness [%] | 100.0 | |
Redundancy | 8.25 | 8.41 |
CC(1/2) | 0.999 | 0.945 |
Crystallization Conditions
crystal ID | method | pH | temperature | details |
1 | VAPOR DIFFUSION, HANGING DROP | 293 | 25% (w/v) PEG 8000 and Tris-HCl buffer (pH 8.5) |