8SFC
Crystal structure of the engineered SsoPox variant IVA4 in alternate state
Experimental procedure
| Experimental method | SINGLE WAVELENGTH |
| Source type | SYNCHROTRON |
| Source details | APS BEAMLINE 23-ID-B |
| Synchrotron site | APS |
| Beamline | 23-ID-B |
| Temperature [K] | 100 |
| Detector technology | PIXEL |
| Collection date | 2017-07-25 |
| Detector | DECTRIS EIGER X 16M |
| Wavelength(s) | 0.774901 |
| Spacegroup name | C 2 2 21 |
| Unit cell lengths | 64.090, 74.950, 137.110 |
| Unit cell angles | 90.00, 90.00, 90.00 |
Refinement procedure
| Resolution | 37.480 - 1.400 |
| R-factor | 0.2055 |
| Rwork | 0.205 |
| R-free | 0.22590 |
| Structure solution method | MOLECULAR REPLACEMENT |
| RMSD bond length | 0.007 |
| RMSD bond angle | 0.871 |
| Data reduction software | XDS |
| Data scaling software | XSCALE |
| Phasing software | REFMAC |
| Refinement software | PHENIX ((1.20.1_4487: ???)) |
Data quality characteristics
| Overall | Outer shell | |
| Low resolution limit [Å] | 68.560 | 1.500 |
| High resolution limit [Å] | 1.400 | 1.400 |
| Rmerge | 0.682 | |
| Rmeas | 0.044 | |
| Number of reflections | 124395 | 23305 |
| <I/σ(I)> | 15.22 | |
| Completeness [%] | 98.9 | |
| Redundancy | 3.36 | |
| CC(1/2) | 0.999 | 0.830 |
Crystallization Conditions
| crystal ID | method | pH | temperature | details |
| 1 | VAPOR DIFFUSION, HANGING DROP | 293 | 25% (w/v) PEG 8000 and Tris-HCl buffer (pH 8.5) |






