8SFB
Crystal structure of the engineered SsoPox variant IVA4
Experimental procedure
Experimental method | SINGLE WAVELENGTH |
Source type | SYNCHROTRON |
Source details | APS BEAMLINE 23-ID-B |
Synchrotron site | APS |
Beamline | 23-ID-B |
Temperature [K] | 100 |
Detector technology | PIXEL |
Collection date | 2017-08-23 |
Detector | DECTRIS EIGER X 16M |
Wavelength(s) | 1.03321 |
Spacegroup name | C 2 2 21 |
Unit cell lengths | 64.470, 74.880, 137.550 |
Unit cell angles | 90.00, 90.00, 90.00 |
Refinement procedure
Resolution | 68.780 - 1.400 |
R-factor | 0.19998 |
Rwork | 0.199 |
R-free | 0.22258 |
Structure solution method | MOLECULAR REPLACEMENT |
RMSD bond length | 0.005 |
RMSD bond angle | 1.048 |
Data reduction software | XDS |
Data scaling software | XSCALE |
Phasing software | REFMAC |
Refinement software | REFMAC (5.8.0352) |
Data quality characteristics
Overall | Outer shell | |
Low resolution limit [Å] | 68.780 | 1.500 |
High resolution limit [Å] | 1.400 | 1.400 |
Rmeas | 0.033 | 0.544 |
Number of reflections | 65450 | 11902 |
<I/σ(I)> | 27.53 | |
Completeness [%] | 99.6 | |
Redundancy | 8.05 | |
CC(1/2) | 1.000 | 0.922 |
Crystallization Conditions
crystal ID | method | pH | temperature | details |
1 | VAPOR DIFFUSION, HANGING DROP | 293 | 25% (w/v) PEG 8000 and Tris-HCl buffer (pH 8.5) |