8SFA
Crystal structure of the engineered SsoPox variant IIIC1
Experimental procedure
| Experimental method | SINGLE WAVELENGTH |
| Source type | SYNCHROTRON |
| Source details | APS BEAMLINE 23-ID-B |
| Synchrotron site | APS |
| Beamline | 23-ID-B |
| Temperature [K] | 100 |
| Detector technology | PIXEL |
| Collection date | 2017-11-03 |
| Detector | DECTRIS EIGER X 16M |
| Wavelength(s) | 1.033202 |
| Spacegroup name | P 21 21 21 |
| Unit cell lengths | 90.230, 104.290, 153.750 |
| Unit cell angles | 90.00, 90.00, 90.00 |
Refinement procedure
| Resolution | 68.236 - 2.320 |
| R-factor | 0.1927 |
| Rwork | 0.190 |
| R-free | 0.24190 |
| Structure solution method | MOLECULAR REPLACEMENT |
| RMSD bond length | 0.008 |
| RMSD bond angle | 0.894 |
| Data reduction software | XDS |
| Data scaling software | XSCALE |
| Phasing software | REFMAC |
| Refinement software | PHENIX ((1.13_2998: ???)) |
Data quality characteristics
| Overall | Outer shell | |
| Low resolution limit [Å] | 68.236 | 2.420 |
| High resolution limit [Å] | 2.320 | 2.320 |
| Rmeas | 0.068 | 0.544 |
| Number of reflections | 62986 | 7364 |
| <I/σ(I)> | 19.78 | |
| Completeness [%] | 99.2 | |
| Redundancy | 8.05 | |
| CC(1/2) | 0.999 | 0.978 |
Crystallization Conditions
| crystal ID | method | pH | temperature | details |
| 1 | VAPOR DIFFUSION, HANGING DROP | 293 | 25% (w/v) PEG 8000 and Tris-HCl buffer (pH 8.5) |






