8ATH
CRYSTAL STRUCTURE OF LAMP1 IN COMPLEX WITH FAB-B.
Experimental procedure
| Experimental method | SINGLE WAVELENGTH |
| Source type | SYNCHROTRON |
| Source details | ESRF BEAMLINE ID29 |
| Synchrotron site | ESRF |
| Beamline | ID29 |
| Temperature [K] | 100 |
| Detector technology | PIXEL |
| Collection date | 2013-09-13 |
| Detector | DECTRIS PILATUS 6M |
| Wavelength(s) | 0.976251 |
| Spacegroup name | C 1 2 1 |
| Unit cell lengths | 149.932, 93.680, 108.009 |
| Unit cell angles | 90.00, 115.93, 90.00 |
Refinement procedure
| Resolution | 72.080 - 2.366 |
| R-factor | 0.2534 |
| Rwork | 0.251 |
| R-free | 0.28980 |
| Structure solution method | MOLECULAR REPLACEMENT |
| Starting model (for MR) | Fab domains |
| RMSD bond length | 0.008 |
| RMSD bond angle | 1.040 |
| Data reduction software | XDS |
| Data scaling software | Aimless |
| Phasing software | PHASER |
| Refinement software | BUSTER (2.11.8) |
Data quality characteristics
| Overall | Outer shell | |
| Low resolution limit [Å] | 72.080 | 2.650 |
| High resolution limit [Å] | 2.370 | 2.370 |
| Rmerge | 0.053 | 0.475 |
| Rpim | 0.034 | 0.305 |
| Number of reflections | 54397 | 15415 |
| <I/σ(I)> | 14.4 | |
| Completeness [%] | 99.1 | 99.3 |
| Redundancy | 3.3 | 3.3 |
| CC(1/2) | 0.998 | 0.837 |
Crystallization Conditions
| crystal ID | method | pH | temperature | details |
| 1 | VAPOR DIFFUSION, SITTING DROP | 7 | 292 | PEG 3350 20% - NaF 0.2M |
