8GE0
Crystal structure of JADE1 PZP domain in complex with Histone H3
Experimental procedure
Experimental method | SINGLE WAVELENGTH |
Source type | SYNCHROTRON |
Source details | ALS BEAMLINE 4.2.2 |
Synchrotron site | ALS |
Beamline | 4.2.2 |
Temperature [K] | 100 |
Detector technology | CMOS |
Collection date | 2018-08-24 |
Detector | RDI CMOS_8M |
Wavelength(s) | 1.27819 |
Spacegroup name | P 41 21 2 |
Unit cell lengths | 78.160, 78.160, 222.880 |
Unit cell angles | 90.00, 90.00, 90.00 |
Refinement procedure
Resolution | 49.510 - 2.400 |
R-factor | 0.2086 |
Rwork | 0.207 |
R-free | 0.24120 |
Structure solution method | SAD |
RMSD bond length | 0.003 |
RMSD bond angle | 0.647 |
Data reduction software | XDS |
Data scaling software | Aimless |
Phasing software | PHENIX |
Refinement software | PHENIX (1.19.2_4158) |
Data quality characteristics
Overall | Outer shell | |
Low resolution limit [Å] | 49.510 | 2.490 |
High resolution limit [Å] | 2.400 | 2.400 |
Rpim | 0.028 | 0.388 |
Number of reflections | 28040 | 2849 |
<I/σ(I)> | 28.2 | |
Completeness [%] | 99.9 | |
Redundancy | 39.8 |
Crystallization Conditions
crystal ID | method | pH | temperature | details |
1 | VAPOR DIFFUSION, SITTING DROP | 291.15 | 0.2 M Sodium chloride, 0.1 M HEPES pH 7.0, 20 % w/v PEG 6000 |