6CDB
Crystal Structure of V66L CzrA in the Zn(II)bound state
Experimental procedure
Experimental method | SINGLE WAVELENGTH |
Source type | SYNCHROTRON |
Source details | ALS BEAMLINE 4.2.2 |
Synchrotron site | ALS |
Beamline | 4.2.2 |
Temperature [K] | 100 |
Detector technology | CMOS |
Collection date | 2012-05-05 |
Detector | RDI CMOS_8M |
Wavelength(s) | 1.00000 |
Spacegroup name | P 21 21 2 |
Unit cell lengths | 54.546, 73.360, 50.158 |
Unit cell angles | 90.00, 90.00, 90.00 |
Refinement procedure
Resolution | 29.608 - 1.990 |
R-factor | 0.197 |
Rwork | 0.195 |
R-free | 0.22750 |
RMSD bond length | 0.007 |
RMSD bond angle | 0.822 |
Data reduction software | XDS |
Data scaling software | Aimless |
Phasing software | PHASER |
Refinement software | PHENIX (1.10.1_2155) |
Data quality characteristics
Overall | Outer shell | |
Low resolution limit [Å] | 41.410 | 2.140 |
High resolution limit [Å] | 1.990 | 1.990 |
Rmeas | 0.073 | 0.782 |
Rpim | 0.030 | 0.313 |
Number of reflections | 13796 | |
<I/σ(I)> | 19.3 | 2.4 |
Completeness [%] | 96.1 | 100 |
Redundancy | 5.9 | 6.2 |
CC(1/2) | 0.999 | 0.806 |
Crystallization Conditions
crystal ID | method | pH | temperature | details |
1 | VAPOR DIFFUSION, HANGING DROP | 293 | 100 mM Ches (pH 9.5), 200 mM NaCl and 10% polyethylene glycol 8000 |