5EBL
KcsA T75G in the Conductive State
Experimental procedure
Experimental method | SINGLE WAVELENGTH |
Source type | SYNCHROTRON |
Source details | ALS BEAMLINE 4.2.2 |
Synchrotron site | ALS |
Beamline | 4.2.2 |
Temperature [K] | 80 |
Detector technology | CMOS |
Collection date | 2015-03-12 |
Detector | RDI CMOS_8M |
Wavelength(s) | 1.0 |
Spacegroup name | I 4 |
Unit cell lengths | 155.410, 155.410, 76.273 |
Unit cell angles | 90.00, 90.00, 90.00 |
Refinement procedure
Resolution | 38.852 - 2.300 |
R-factor | 0.2085 |
Rwork | 0.205 |
R-free | 0.24190 |
Structure solution method | MOLECULAR REPLACEMENT |
Starting model (for MR) | 1k4c |
Data reduction software | XDS |
Data scaling software | XDS |
Phasing software | PHASER |
Refinement software | PHENIX (1.8_1069) |
Data quality characteristics
Overall | Inner shell | Outer shell | |
Low resolution limit [Å] | 54.947 | 54.947 | 2.420 |
High resolution limit [Å] | 2.300 | 7.270 | 2.300 |
Rmerge | 0.109 | 0.034 | 1.291 |
Rmeas | 0.118 | ||
Rpim | 0.044 | 0.014 | 0.523 |
Total number of observations | 290580 | 9581 | 41528 |
Number of reflections | 40541 | ||
<I/σ(I)> | 13.1 | 43.1 | 1.5 |
Completeness [%] | 100.0 | 99.7 | 100 |
Redundancy | 7.2 | 7.2 | 7.1 |
Crystallization Conditions
crystal ID | method | pH | temperature | details |
1 | VAPOR DIFFUSION, SITTING DROP | 291 | PEG 400 |