4XV6
CcP gateless cavity
Experimental procedure
| Experimental method | SINGLE WAVELENGTH |
| Source type | SYNCHROTRON |
| Source details | ALS BEAMLINE 8.3.1 |
| Synchrotron site | ALS |
| Beamline | 8.3.1 |
| Temperature [K] | 273 |
| Detector technology | CCD |
| Collection date | 2011-12-11 |
| Detector | ADSC QUANTUM 315r |
| Wavelength(s) | 0.95372 |
| Spacegroup name | P 21 21 21 |
| Unit cell lengths | 51.480, 76.520, 107.300 |
| Unit cell angles | 90.00, 90.00, 90.00 |
Refinement procedure
| Resolution | 33.420 - 1.550 |
| R-factor | 0.105 |
| Rwork | 0.104 |
| R-free | 0.13600 |
| Structure solution method | MOLECULAR REPLACEMENT |
| RMSD bond length | 0.019 |
| RMSD bond angle | 1.646 |
| Data reduction software | xia2 (0.3.3.3) |
| Phasing software | PHASER |
| Refinement software | PHENIX |
Data quality characteristics
| Overall | Outer shell | |
| Low resolution limit [Å] | 33.420 | 1.590 |
| High resolution limit [Å] | 1.550 | 1.550 |
| Rmerge | 0.040 | 0.649 |
| Number of reflections | 62017 | |
| <I/σ(I)> | 17 | 2.2 |
| Completeness [%] | 99.7 | 99.7 |
| Redundancy | 4 | 4.1 |
Crystallization Conditions
| crystal ID | method | pH | temperature | details |
| 1 | VAPOR DIFFUSION, HANGING DROP | 6 | 283 | CRYSTAL GROWN IN EQUAL VOLUME OF 500mM MES BUFFER AND 25% MPD |
