A: DNA PROTECTION DURING STARVATION PROTEIN B: DNA PROTECTION DURING STARVATION PROTEIN C: DNA PROTECTION DURING STARVATION PROTEIN D: DNA PROTECTION DURING STARVATION PROTEIN E: DNA PROTECTION DURING STARVATION PROTEIN F: DNA PROTECTION DURING STARVATION PROTEIN G: DNA PROTECTION DURING STARVATION PROTEIN H: DNA PROTECTION DURING STARVATION PROTEIN I: DNA PROTECTION DURING STARVATION PROTEIN J: DNA PROTECTION DURING STARVATION PROTEIN K: DNA PROTECTION DURING STARVATION PROTEIN L: DNA PROTECTION DURING STARVATION PROTEIN ヘテロ分子
ENGINEERED RESIDUE IN CHAIN A, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN B, GLN 8 TO GLY ENGINEERED ...ENGINEERED RESIDUE IN CHAIN A, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN B, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN C, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN D, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN E, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN F, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN G, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN H, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN I, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN J, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN K, GLN 8 TO GLY ENGINEERED RESIDUE IN CHAIN L, GLN 8 TO GLY
配列の詳細
UNIPROT ENTRY HAS FULL LENGTH PROTEIN. PROTEIN DESCRIBED IN THIS PDB-ENTRY HAS TRUNCATED N-TERMINUS ...UNIPROT ENTRY HAS FULL LENGTH PROTEIN. PROTEIN DESCRIBED IN THIS PDB-ENTRY HAS TRUNCATED N-TERMINUS WITH FIRST 7 RESIDUES MISSING AND Q8G MUTATION.
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実験情報
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実験
実験
手法: X線回折 / 使用した結晶の数: 1
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試料調製
結晶
マシュー密度: 2.31 Å3/Da / 溶媒含有率: 46.28 % / 解説: NONE
結晶化
pH: 7.3 詳細: PROTEIN WAS CRYSTALLIZED FROM 30% PEG 400, 0.2 M CACL2, 0.1 M HEPES-NA, PH 7.4 AND 1 MM ZNCL2.
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データ収集
回折
平均測定温度: 100 K
放射光源
由来: シンクロトロン / サイト: MAX II / ビームライン: I711 / 波長: 1.06276
解像度: 1.8→19.97 Å / Cor.coef. Fo:Fc: 0.958 / Cor.coef. Fo:Fc free: 0.933 / SU B: 3.651 / SU ML: 0.111 / 交差検証法: THROUGHOUT / ESU R: 0.138 / ESU R Free: 0.134 / 立体化学のターゲット値: MAXIMUM LIKELIHOOD / 詳細: HYDROGENS HAVE BEEN ADDED IN THE RIDING POSITIONS.
Rfactor
反射数
%反射
Selection details
Rfree
0.248
8779
4.6 %
RANDOM
Rwork
0.206
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obs
0.208
180247
100 %
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溶媒の処理
イオンプローブ半径: 0.8 Å / 減衰半径: 0.8 Å / VDWプローブ半径: 1.4 Å / 溶媒モデル: MASK