8VD6
Crystal structure of CAP Repeat
Experimental procedure
Experimental method | SINGLE WAVELENGTH |
Source type | SYNCHROTRON |
Source details | NSLS-II BEAMLINE 17-ID-2 |
Synchrotron site | NSLS-II |
Beamline | 17-ID-2 |
Temperature [K] | 100 |
Detector technology | PIXEL |
Collection date | 2023-10-13 |
Detector | DECTRIS EIGER X 16M |
Wavelength(s) | 0.97934 |
Spacegroup name | P 1 21 1 |
Unit cell lengths | 21.627, 45.055, 72.111 |
Unit cell angles | 90.00, 91.55, 90.00 |
Refinement procedure
Resolution | 38.210 - 3.700 |
R-factor | 0.2485 |
Rwork | 0.246 |
R-free | 0.28490 |
Structure solution method | MOLECULAR REPLACEMENT |
RMSD bond length | 0.002 |
RMSD bond angle | 0.545 |
Data reduction software | XDS |
Data scaling software | XSCALE |
Phasing software | PHASER |
Refinement software | PHENIX (dev_4761) |
Data quality characteristics
Overall | Outer shell | |
Low resolution limit [Å] | 72.080 | 4.050 |
High resolution limit [Å] | 3.700 | 3.700 |
Rmerge | 0.047 | 0.093 |
Number of reflections | 1543 | 359 |
<I/σ(I)> | 11.6 | 7.6 |
Completeness [%] | 99.8 | 99.7 |
Redundancy | 2 | 2 |
CC(1/2) | 0.997 | 0.974 |
Crystallization Conditions
crystal ID | method | pH | temperature | details |
1 | VAPOR DIFFUSION, SITTING DROP | 4 | 293 | 0.1 M PCB buffer, pH 4, 25% PEG1500 |