6CDA
Crystal structure of L34A CzrA in the Zn(II)bound state
Experimental procedure
Experimental method | SINGLE WAVELENGTH |
Source type | SYNCHROTRON |
Source details | ALS BEAMLINE 4.2.2 |
Synchrotron site | ALS |
Beamline | 4.2.2 |
Temperature [K] | 100 |
Detector technology | CMOS |
Collection date | 2017-05-17 |
Detector | RDI CMOS_8M |
Wavelength(s) | 1.00003 |
Spacegroup name | P 41 21 2 |
Unit cell lengths | 31.987, 31.987, 183.392 |
Unit cell angles | 90.00, 90.00, 90.00 |
Refinement procedure
Resolution | 45.848 - 2.000 |
R-factor | 0.2008 |
Rwork | 0.199 |
R-free | 0.24240 |
Structure solution method | MOLECULAR REPLACEMENT |
Starting model (for MR) | 1r1u |
Data reduction software | XDS |
Data scaling software | Aimless |
Phasing software | PHASER |
Refinement software | PHENIX |
Data quality characteristics
Overall | Outer shell | |
Low resolution limit [Å] | 45.850 | 2.072 |
High resolution limit [Å] | 2.000 | 2.000 |
Rmeas | 0.101 | 1.112 |
Rpim | 0.028 | 0.304 |
Number of reflections | 6867 | |
<I/σ(I)> | 17.6 | 2.5 |
Completeness [%] | 96.4 | 100 |
Redundancy | 12.4 | 13 |
CC(1/2) | 0.999 | 0.878 |
Crystallization Conditions
crystal ID | method | pH | temperature | details |
1 | VAPOR DIFFUSION, HANGING DROP | 9 | 293 | 0.1 M bis-tris propane (pH 9) and polyethylene glycol 550 20-22% |