6BZP

STGGYG from low-complexity domain of FUS, residues 77-82

Experimental procedure

Source type	ELECTRON MICROSCOPE
Source details	TECNAI F20 TEM
Temperature [K]	100
Detector technology	CMOS
Collection date	2015-08-18
Detector	TVIPS F416 CMOS CAMERA
Wavelength(s)	0.0251
Spacegroup name	P 21 21 21
Unit cell lengths	13.790, 4.930, 101.900
Unit cell angles	90.00, 90.00, 90.00

Refinement procedure

Resolution	13.310 - 1.100
R-factor	0.223
Rwork	0.219
R-free	0.25500
Structure solution method	AB INITIO PHASING
RMSD bond length	0.013
RMSD bond angle	1.060
Data scaling software	XSCALE
Refinement software	BUSTER (2.10.3)

Data quality characteristics

	Overall	Inner shell	Outer shell
Low resolution limit [Å]	13.310	13.310	1.130
High resolution limit [Å]	1.100	4.920	1.100
Rmerge	0.250	0.135	0.553
Rmeas	0.266	0.162	0.629
Total number of observations	23271
Number of reflections	3220	41	197
<I/σ(I)>	4.15	4.75	1.46
Completeness [%]	95.5	91.1	74.9
Redundancy	7.227	2.854	3.939
CC(1/2)	0.985	0.988	0.729

Crystallization Conditions

crystal ID	method	pH	temperature	details
1	VAPOR DIFFUSION, HANGING DROP	4.6	298	0.1 M sodium acetate, pH 4.6, 0.15 M ammonium sulfate, 25% w/v PEG2000 MME