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5O8B

Difference-refined excited-state structure of rsEGFP2 1ps following 400nm-laser irradiation of the off-state.

Experimental procedure
Experimental methodSINGLE WAVELENGTH
Source typeFREE ELECTRON LASER
Source detailsSLAC LCLS BEAMLINE CXI
Synchrotron siteSLAC LCLS
BeamlineCXI
Temperature [K]293
Detector technologyPIXEL
Collection date2015-05-01
DetectorCS-PAD CXI-1
Wavelength(s)1.3
Spacegroup nameP 21 21 21
Unit cell lengths51.530, 62.850, 71.760
Unit cell angles90.00, 90.00, 90.00
Refinement procedure
Resolution16.943 - 1.700
R-factor0.2911
Rwork0.290
R-free0.31120
Structure solution methodMOLECULAR REPLACEMENT
Starting model (for MR)5dtx
RMSD bond length0.003
RMSD bond angle0.751
Data reduction softwareCrystFEL (0.6.1)
Data scaling softwareCrystFEL (0.6.1)
Phasing softwarePHASER
Refinement softwarePHENIX ((dev_2376: ???))
Data quality characteristics
 Overall
Low resolution limit [Å]16.943
High resolution limit [Å]1.900
Number of reflections17970
<I/σ(I)>9.35
Completeness [%]95.0
Redundancy1
Crystallization Conditions
crystal IDmethodpHtemperaturedetails
1BATCH MODE82932 M ammonium sulphate, 20 mM NaCl, 120 mM HEPES

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