5O8B
Difference-refined excited-state structure of rsEGFP2 1ps following 400nm-laser irradiation of the off-state.
Experimental procedure
Experimental method | SINGLE WAVELENGTH |
Source type | FREE ELECTRON LASER |
Source details | SLAC LCLS BEAMLINE CXI |
Synchrotron site | SLAC LCLS |
Beamline | CXI |
Temperature [K] | 293 |
Detector technology | PIXEL |
Collection date | 2015-05-01 |
Detector | CS-PAD CXI-1 |
Wavelength(s) | 1.3 |
Spacegroup name | P 21 21 21 |
Unit cell lengths | 51.530, 62.850, 71.760 |
Unit cell angles | 90.00, 90.00, 90.00 |
Refinement procedure
Resolution | 16.943 - 1.700 |
R-factor | 0.2911 |
Rwork | 0.290 |
R-free | 0.31120 |
Structure solution method | MOLECULAR REPLACEMENT |
Starting model (for MR) | 5dtx |
RMSD bond length | 0.003 |
RMSD bond angle | 0.751 |
Data reduction software | CrystFEL (0.6.1) |
Data scaling software | CrystFEL (0.6.1) |
Phasing software | PHASER |
Refinement software | PHENIX ((dev_2376: ???)) |
Data quality characteristics
Overall | |
Low resolution limit [Å] | 16.943 |
High resolution limit [Å] | 1.900 |
Number of reflections | 17970 |
<I/σ(I)> | 9.35 |
Completeness [%] | 95.0 |
Redundancy | 1 |
Crystallization Conditions
crystal ID | method | pH | temperature | details |
1 | BATCH MODE | 8 | 293 | 2 M ammonium sulphate, 20 mM NaCl, 120 mM HEPES |