4D9S
Crystal structure of Arabidopsis thaliana UVR8 (UV Resistance locus 8)
Experimental procedure
Experimental method | SINGLE WAVELENGTH |
Source type | SYNCHROTRON |
Source details | SSRL BEAMLINE BL11-1 |
Synchrotron site | SSRL |
Beamline | BL11-1 |
Temperature [K] | 100 |
Detector technology | CCD |
Collection date | 2011-07-09 |
Detector | MARMOSAIC 325 mm CCD |
Wavelength(s) | 0.97945 |
Spacegroup name | P 1 21 1 |
Unit cell lengths | 68.117, 51.511, 97.084 |
Unit cell angles | 90.00, 102.89, 90.00 |
Refinement procedure
Resolution | 49.421 - 1.701 |
R-factor | 0.1605 |
Rwork | 0.160 |
R-free | 0.19390 |
Structure solution method | MOLECULAR REPLACEMENT |
Starting model (for MR) | 3kci |
RMSD bond length | 0.005 |
RMSD bond angle | 0.986 |
Data reduction software | HKL-2000 |
Data scaling software | HKL-2000 |
Phasing software | PHASER |
Refinement software | PHENIX ((phenix.refine: 1.7.2_869)) |
Data quality characteristics
Overall | Outer shell | |
Low resolution limit [Å] | 50.000 | 1.760 |
High resolution limit [Å] | 1.700 | 1.700 |
Number of reflections | 73086 | |
Completeness [%] | 99.7 | 97.4 |
Crystallization Conditions
crystal ID | method | pH | temperature | details |
1 | VAPOR DIFFUSION | 6 | 293 | MPEG 2K, NACL, pH 6.0, VAPOR DIFFUSION, temperature 293K |