ENGINEERED RESIDUE IN CHAIN A, LEU 10 TO GLN ENGINEERED RESIDUE IN CHAIN A, ASP 160 TO ASN ...ENGINEERED RESIDUE IN CHAIN A, LEU 10 TO GLN ENGINEERED RESIDUE IN CHAIN A, ASP 160 TO ASN ENGINEERED RESIDUE IN CHAIN A, LEU 200 TO PHE ENGINEERED RESIDUE IN CHAIN B, LEU 10 TO GLN ENGINEERED RESIDUE IN CHAIN B, ASP 160 TO ASN ENGINEERED RESIDUE IN CHAIN B, LEU 200 TO PHE ENGINEERED RESIDUE IN CHAIN C, LEU 10 TO GLN ENGINEERED RESIDUE IN CHAIN C, ASP 160 TO ASN ENGINEERED RESIDUE IN CHAIN C, LEU 200 TO PHE ENGINEERED RESIDUE IN CHAIN D, LEU 10 TO GLN ENGINEERED RESIDUE IN CHAIN D, ASP 160 TO ASN ENGINEERED RESIDUE IN CHAIN D, LEU 200 TO PHE ENGINEERED RESIDUE IN CHAIN E, LEU 10 TO GLN ENGINEERED RESIDUE IN CHAIN E, ASP 160 TO ASN ENGINEERED RESIDUE IN CHAIN E, LEU 200 TO PHE ENGINEERED RESIDUE IN CHAIN F, LEU 10 TO GLN ENGINEERED RESIDUE IN CHAIN F, ASP 160 TO ASN ENGINEERED RESIDUE IN CHAIN F, LEU 200 TO PHE
配列の詳細
THE FOLLOWING MUTATIONS ARE PRESENT IN THE CRYSTAL THOUGH THE RESIDUES WERE UNOBSERVED IN THE ...THE FOLLOWING MUTATIONS ARE PRESENT IN THE CRYSTAL THOUGH THE RESIDUES WERE UNOBSERVED IN THE ELCTRON DENSITY MAP. CHAIN D: L10Q AND L200F AND CHAIN F: L10Q
解像度: 2.83→49.39 Å / Cor.coef. Fo:Fc: 0.907 / Cor.coef. Fo:Fc free: 0.832 / SU B: 15.822 / SU ML: 0.313 / 交差検証法: THROUGHOUT / ESU R Free: 0.465 / 立体化学のターゲット値: MAXIMUM LIKELIHOOD / 詳細: HYDROGENS HAVE BEEN ADDED IN THE RIDING POSITIONS.
Rfactor
反射数
%反射
Selection details
Rfree
0.301
2030
5 %
RANDOM
Rwork
0.231
-
-
-
obs
0.235
38744
99 %
-
溶媒の処理
イオンプローブ半径: 0.8 Å / 減衰半径: 0.8 Å / VDWプローブ半径: 1.4 Å / 溶媒モデル: BABINET MODEL WITH MASK