ENGINEERED RESIDUE IN CHAIN A, CYS 81 TO SER ENGINEERED RESIDUE IN CHAIN A, CYS 108 TO SER ...ENGINEERED RESIDUE IN CHAIN A, CYS 81 TO SER ENGINEERED RESIDUE IN CHAIN A, CYS 108 TO SER ENGINEERED RESIDUE IN CHAIN B, CYS 81 TO SER ENGINEERED RESIDUE IN CHAIN B, CYS 108 TO SER ENGINEERED RESIDUE IN CHAIN C, CYS 81 TO SER ENGINEERED RESIDUE IN CHAIN C, CYS 108 TO SER ENGINEERED RESIDUE IN CHAIN D, CYS 81 TO SER ENGINEERED RESIDUE IN CHAIN D, CYS 108 TO SER ENGINEERED RESIDUE IN CHAIN E, CYS 81 TO SER ENGINEERED RESIDUE IN CHAIN E, CYS 108 TO SER ENGINEERED RESIDUE IN CHAIN F, CYS 81 TO SER ENGINEERED RESIDUE IN CHAIN F, CYS 108 TO SER
解像度: 2.4→90.57 Å / Cor.coef. Fo:Fc: 0.942 / Cor.coef. Fo:Fc free: 0.933 / SU B: 20.138 / SU ML: 0.222 / 交差検証法: THROUGHOUT / ESU R: 0.44 / ESU R Free: 0.277 / 立体化学のターゲット値: MAXIMUM LIKELIHOOD 詳細: HYDROGENS HAVE BEEN ADDED IN THE RIDING POSITIONS. HYDROGENS HAVE BEEN USED IF PRESENT IN THE INPUT
Rfactor
反射数
%反射
Selection details
Rfree
0.26612
1824
5 %
RANDOM
Rwork
0.22024
-
-
-
obs
0.22262
34623
99.87 %
-
溶媒の処理
イオンプローブ半径: 0.8 Å / 減衰半径: 0.8 Å / VDWプローブ半径: 1.2 Å / 溶媒モデル: MASK