ジャーナル: Science / 年: 2020 タイトル: Cryo-EM structure of a neuronal functional amyloid implicated in memory persistence in . 著者: Ruben Hervas / Michael J Rau / Younshim Park / Wenjuan Zhang / Alexey G Murzin / James A J Fitzpatrick / Sjors H W Scheres / Kausik Si / 要旨: How long-lived memories withstand molecular turnover is a fundamental question. Aggregates of a prion-like RNA-binding protein, cytoplasmic polyadenylation element-binding (CPEB) protein, is a ...How long-lived memories withstand molecular turnover is a fundamental question. Aggregates of a prion-like RNA-binding protein, cytoplasmic polyadenylation element-binding (CPEB) protein, is a putative substrate of long-lasting memories. We isolated aggregated CPEB, Orb2, from adult heads and determined its activity and atomic structure, at 2.6-angstrom resolution, using cryo-electron microscopy. Orb2 formed ~75-nanometer-long threefold-symmetric amyloid filaments. Filament formation transformed Orb2 from a translation repressor to an activator and "seed" for further translationally active aggregation. The 31-amino acid protofilament core adopted a cross-β unit with a single hydrophilic hairpin stabilized through interdigitated glutamine packing. Unlike the hydrophobic core of pathogenic amyloids, the hydrophilic core of Orb2 filaments suggests how some neuronal amyloids could be a stable yet regulatable substrate of memory.
解像度: 2.6→86.72 Å / Cor.coef. Fo:Fc: 0.854 / WRfactor Rwork: 0.322 / SU B: 10.458 / SU ML: 0.21 / Average fsc overall: 0.8918 / Average fsc work: 0.8918 / ESU R: 0.37 / 詳細: Hydrogens have been added in their riding positions
Rfactor
反射数
%反射
Rwork
0.3216
24927
-
all
0.322
-
-
Rfree
-
-
0 %
obs
-
-
100 %
溶媒の処理
溶媒モデル: BABINET MODEL
原子変位パラメータ
Biso mean: 46.615 Å2
Baniso -1
Baniso -2
Baniso -3
1-
3.964 Å2
-0.057 Å2
-0.012 Å2
2-
-
3.926 Å2
-0.015 Å2
3-
-
-
-7.89 Å2
拘束条件
Refine-ID
タイプ
Dev ideal
Dev ideal target
数
ELECTRONMICROSCOPY
r_bond_refined_d
0.013
0.012
2865
ELECTRONMICROSCOPY
r_angle_refined_deg
0.998
1.616
3861
ELECTRONMICROSCOPY
r_dihedral_angle_1_deg
5.582
5
324
ELECTRONMICROSCOPY
r_dihedral_angle_2_deg
32.937
26.667
270
ELECTRONMICROSCOPY
r_dihedral_angle_3_deg
16.633
15
513
ELECTRONMICROSCOPY
r_chiral_restr
0.131
0.2
306
ELECTRONMICROSCOPY
r_gen_planes_refined
0.012
0.02
2484
ELECTRONMICROSCOPY
r_nbd_refined
0.153
0.2
1810
ELECTRONMICROSCOPY
r_nbtor_refined
0.268
0.2
3004
ELECTRONMICROSCOPY
r_xyhbond_nbd_refined
0.106
0.2
206
ELECTRONMICROSCOPY
r_mcbond_it
5.523
3.952
1188
ELECTRONMICROSCOPY
r_mcangle_it
8.553
5.836
1494
ELECTRONMICROSCOPY
r_scbond_it
8.576
4.898
1677
ELECTRONMICROSCOPY
r_scangle_it
13.629
7.077
2349
ELECTRONMICROSCOPY
r_lrange_it
17.636
53.966
3568
LS精密化 シェル
Refine-ID: ELECTRON MICROSCOPY / Num. reflection Rfree: _ / Total num. of bins used: 20 / % reflection obs: 100 %