ENGINEERED RESIDUE IN CHAIN A, CYS 109 TO SER ENGINEERED RESIDUE IN CHAIN A, CYS 205 TO SER ...ENGINEERED RESIDUE IN CHAIN A, CYS 109 TO SER ENGINEERED RESIDUE IN CHAIN A, CYS 205 TO SER ENGINEERED RESIDUE IN CHAIN B, CYS 109 TO SER ENGINEERED RESIDUE IN CHAIN B, CYS 205 TO SER
構造決定の手法: 分子置換 / 解像度: 2.9→44.609 Å / SU ML: 0.45 / σ(F): 1.42 / 位相誤差: 30.16 / 立体化学のターゲット値: ML 詳細: NO SIGMA CUTOFF WAS APPLIED TO THE DATA. FULL ANOMALOUS DATA USED IN FIT TO DATA STATISTICS.
Rfactor
反射数
%反射
Rfree
0.279
629
5 %
Rwork
0.2123
-
-
obs
0.2156
12547
92.85 %
溶媒の処理
減衰半径: 0.72 Å / VDWプローブ半径: 1 Å / 溶媒モデル: FLAT BULK SOLVENT MODEL / Bsol: 48.137 Å2 / ksol: 0.341 e/Å3