解像度: 2.8→25.765 Å / Cor.coef. Fo:Fc: 0.834 / Cor.coef. Fo:Fc free: 0.724 / 交差検証法: FREE R-VALUE 詳細: Hydrogens have been used if present in the input file
Rfactor
反射数
%反射
Rfree
0.3261
129
5.025 %
Rwork
0.2943
2438
-
all
0.296
-
-
obs
-
2567
80.698 %
溶媒の処理
イオンプローブ半径: 0.8 Å / 減衰半径: 0.8 Å / VDWプローブ半径: 1.2 Å / 溶媒モデル: MASK BULK SOLVENT
原子変位パラメータ
Biso mean: 35.48 Å2
Baniso -1
Baniso -2
Baniso -3
1-
-4.552 Å2
0 Å2
0 Å2
2-
-
-4.552 Å2
0 Å2
3-
-
-
9.103 Å2
拘束条件
Refine-ID
タイプ
Dev ideal
Dev ideal target
数
ELECTRONCRYSTALLOGRAPHY
r_bond_refined_d
0.004
0.012
1021
ELECTRONCRYSTALLOGRAPHY
r_angle_refined_deg
1.315
1.777
1381
ELECTRONCRYSTALLOGRAPHY
r_dihedral_angle_1_deg
6.239
5
128
ELECTRONCRYSTALLOGRAPHY
r_dihedral_angle_2_deg
3.047
5
11
ELECTRONCRYSTALLOGRAPHY
r_dihedral_angle_3_deg
14.827
10
166
ELECTRONCRYSTALLOGRAPHY
r_dihedral_angle_6_deg
14.487
10
50
ELECTRONCRYSTALLOGRAPHY
r_chiral_restr
0.098
0.2
144
ELECTRONCRYSTALLOGRAPHY
r_gen_planes_refined
0.005
0.02
819
ELECTRONCRYSTALLOGRAPHY
r_nbd_refined
0.253
0.2
509
ELECTRONCRYSTALLOGRAPHY
r_nbtor_refined
0.31
0.2
698
ELECTRONCRYSTALLOGRAPHY
r_xyhbond_nbd_refined
0.45
0.2
50
ELECTRONCRYSTALLOGRAPHY
r_symmetry_nbd_refined
0.2
0.2
24
ELECTRONCRYSTALLOGRAPHY
r_symmetry_xyhbond_nbd_refined
0.279
0.2
11
ELECTRONCRYSTALLOGRAPHY
r_mcbond_it
2.485
3.352
515
ELECTRONCRYSTALLOGRAPHY
r_mcangle_it
4.164
6.02
642
ELECTRONCRYSTALLOGRAPHY
r_scbond_it
3.029
3.772
506
ELECTRONCRYSTALLOGRAPHY
r_scangle_it
4.984
6.786
739
ELECTRONCRYSTALLOGRAPHY
r_lrange_it
9.83
41.305
4456
LS精密化 シェル
Refine-ID: ELECTRON CRYSTALLOGRAPHY / Total num. of bins used: 20