4G7V

Crystal structure of voltage sensing domain of Ci-VSP with fragment antibody (R217E, 2.5 A)

Experimental procedure

実験手法	SINGLE WAVELENGTH
Source type	SYNCHROTRON
Source details	APS BEAMLINE 23-ID-B
Synchrotron site	APS
Beamline	23-ID-B
Temperature [K]	100
Detector technology	CCD
Detector	MAR 300 CCD
Spacegroup name	P 65 2 2
格子定数 [Å]	120.250, 120.250, 229.880
格子定数 [度]	90.00, 90.00, 120.00

精密化法

残基	37.238 - 2.500
R因子	0.2028
Rwork	0.201
R-free	0.24040
Structure solution method	MOLECULAR REPLACEMENT
結合長の平均二乗偏差(RMSD) [Å]	0.008
結合角の平均二乗偏差(RMSD) [度]	1.126
Data reduction software	HKL-2000
Data scaling software	HKL-2000
Phasing software	PHASER
Refinement software	PHENIX ((phenix.refine: 1.7.3_928))

Quality characteristics

	Overall
分解能 [Å] (低)	50.000
分解能 [Å] (高)	2.500
独立反射数	33756
完全性 [%]	99.8
冗長性	5.1

結晶化条件

結晶ID	方法	pH	温度	溶液条件
1	VAPOR DIFFUSION, HANGING DROP	8	293	0.1 M SPG, 20% PEG 1500, 10% glycerol, pH 8.0, VAPOR DIFFUSION, HANGING DROP, temperature 293K
1	VAPOR DIFFUSION, HANGING DROP	8	293	0.1 M SPG, 20% PEG 1500, 10% glycerol, pH 8.0, VAPOR DIFFUSION, HANGING DROP, temperature 293K