3QLN
Crystal structure of ATRX ADD domain in free state
Experimental procedure
| 実験手法 | SINGLE WAVELENGTH |
| Source type | SYNCHROTRON |
| Source details | NSLS BEAMLINE X29A |
| Synchrotron site | NSLS |
| Beamline | X29A |
| Temperature [K] | 100 |
| Detector technology | CCD |
| Collection date | 2010-04-06 |
| Detector | ADSC QUANTUM 315 |
| Wavelength(s) | 1.2827 |
| Spacegroup name | P 32 |
| 格子定数 [Å] | 74.167, 74.167, 54.091 |
| 格子定数 [度] | 90.00, 90.00, 120.00 |
精密化法
| 残基 | 32.115 - 1.901 |
| R因子 | 0.1298 |
| Rwork | 0.127 |
| R-free | 0.15830 |
| Structure solution method | SAD |
| 結合長の平均二乗偏差(RMSD) [Å] | 0.006 |
| 結合角の平均二乗偏差(RMSD) [度] | 0.919 |
| Data reduction software | HKL-2000 |
| Data scaling software | HKL-2000 |
| Phasing software | CNS |
| Refinement software | PHENIX (1.6.2_432) |
Quality characteristics
| Overall | |
| 分解能 [Å] (低) | 50.000 |
| 分解能 [Å] (高) | 1.900 |
| Rmerge_l_obs | 0.063 |
| 独立反射数 | 52327 |
| <I/σ(I)> | 43.6 |
| 完全性 [%] | 99.9 |
| 冗長性 | 5.6 |
結晶化条件
| 結晶ID | 方法 | pH | 温度 | 溶液条件 |
| 1 | VAPOR DIFFUSION, SITTING DROP | 7.5 | 277 | 25% (v/v) PEG 4000, 100mM HEPES-NaOH, 0.2M KCL, pH 7.5, VAPOR DIFFUSION, SITTING DROP, temperature 277K |
